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Deng, Y.*; Watanabe, Yukinobu*; Manabe, Seiya*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro; Tampo, Motonobu*; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 71(4), p.912 - 920, 2024/04
With the miniaturization of semiconductors and the decrease in operating voltage, there is a growing interest and discussion in whether the muons in cosmic rays may be the source of single event upsets (SEUs). In the case of neutron-induced SEUs, it was reported that the irradiation side has the impact on SEU cross sections. Here, to investigate the impact of irradiation direction on muon-induced SEUs, we have measured and simulate muon-induced SEUs in 65-nm bulk SRAMs with different muon irradiation directions. It was found that the peak SEU cross section for the package side irradiation is about twice large as that for the board side irradiation. We also revealed that the difference in observed SEU cross sections between the package side and the board side irradiation is caused by differences in energy straggling due to changes in penetration depth depending on the incident direction.
Abe, Shinichiro
Nihon Genshiryoku Gakkai-Shi ATOMO
, 65(5), p.326 - 330, 2023/05
Non-destructive faults (the so-called soft errors) in microelectronics caused by environmental radiation such as neutrons and muons have been recognized as a serious reliability problem. The number of microelectronics requiring high reliability increases with the growth of the information society. Therefore, it is not realistic to evaluate the soft error rate (SER) of all microelectronics by measurement. Moreover, the evaluation of SER in the pre-manufacturing stage is sometimes required. As a result, the evaluation of SER by simulation become more important. We have developed the soft error simulation method with PHITS code. We have also simulated the neutron- and muon-induced soft errors. These results will be reported in the journal of the Atomic Energy Society of Japan (AESJ) as the explanatory article.
Okita, Shoichiro; Nagaya, Yasunobu; Fukaya, Yuji
Journal of Nuclear Science and Technology, 58(9), p.992 - 998, 2021/09
Times Cited Count：2 Percentile：30.55(Nuclear Science & Technology)Liao, W.*; Ito, Kojiro*; Abe, Shinichiro; Mitsuyama, Yukio*; Hashimoto, Masanori*
IEEE Transactions on Nuclear Science, 68(6), p.1228 - 1234, 2021/06
Times Cited Count：2 Percentile：30.55(Engineering, Electrical & Electronic)Secondary cosmic-ray neutron-induced single event upset (SEU) is a cause of soft errors on micro electronic devices. Multiple cell upsets (MCUs) are particularly serious problems since it is difficult to recover MCUs. In this study, we have performed irradiation tests of neutrons on 65-nm bulk SRAM at the national metrology institute of Japan (NMIJ) in Advanced Industrial Science and Technology (AIST) and measured SEU cross sections and MCU cross sections to investigate the effect on neutrons with the energies below 10 MeV on soft errors. It was found that SEU cross sections change drastically around 6 MeV. The proportion of MCU to total events does not change very much over the wide range of neutron energy. We also analyzed the total soft error rate (SER) of SEU and MCU by folding the neutron energy-dependent cross section and the flux spectra of the terrestrial neutron at New York and Tokyo. The calculated result indicates that the SER originating from the low-energy neutrons below 10 MeV is mostly negligible in the terrestrial environment.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Watanabe, Yukinobu*; Abe, Shinichiro; Tampo, Motonobu*; Takeshita, Soshi*; Miyake, Yasuhiro*
IEEE Transactions on Nuclear Science, 67(7), p.1566 - 1572, 2020/07
Times Cited Count：0 Percentile：0.01(Engineering, Electrical & Electronic)Muon-induced single event upset (SEU) is predicted to increase with technology scaling. The angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk SRAM and FDSOI SRAM at two angles of incidence: 0 degree (vertical) and 45 degree (tilted). The tilted incidence drifts the muon energy peak to a higher energy. Moreover, the SEU characteristics (i.e., such as the voltage dependences of the SEU cross sections and multiple cells upset patterns) between the vertical and tilted incidences are similar.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Abe, Shinichiro; Watanabe, Yukinobu*
IEEE Transactions on Nuclear Science, 66(7), p.1390 - 1397, 2019/07
Times Cited Count：13 Percentile：81.94(Engineering, Electrical & Electronic)Multiple-cell upset (MCU) in static random access memory (SRAM) is a major concern in radiation effects on microelectronic devices since it can spoil error correcting codes. Neutron-induced MCUs have been characterized for terrestrial environment. On the other hand, negative muon-induced MCUs were recently reported. Neutron- and negative muon-induced MCUs are both caused by secondary ions, and hence, they are expected to have some similarity. In this paper, we compare negative muon- and neutron-induced MCUs in 65-nm bulk SRAMs at the irradiation experiments using spallation and quasi-monoenergetic neutrons and monoenergetic negative muons. The measurement results show that the dependencies of MCU event cross section on operating voltage are almost identical. The Monte Carlo simulation is conducted to investigate the deposited charge. The distributions of deposited charge obtained by the simulation are consistent with the above-mentioned experimental observations.
Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Hashimoto, Masanori*; Abe, Shinichiro
IEEE Transactions on Nuclear Science, 66(7), p.1398 - 1403, 2019/07
Times Cited Count：8 Percentile：65.94(Engineering, Electrical & Electronic)Cosmic ray-induced soft errors have been recognized as a major threat for electronics used at ground level. Recently, cosmic-ray muon-induced soft errors have received much attention due to the reduction of soft error immunity on SRAMs. In the previous studies, muon-induced soft error rates (SERs) for various technology devices were predicted with only the positive muon irradiation tests and simulation. In this paper, the muon-induced SEU rates for the 65-nm bulk and UTBB-SOI SRAMs are estimated by using the experimental data of both negative and positive muons. The experimental results showed that the negative muon SEU cross sections for the bulk SRAM are significantly larger than those for the UTBB-SOI. Estimation of muon-induced SEU rates at ground level was performed using PHITS with the experimental results. The muon-induced SER on the first floor of the building was estimated to be at most 10% of the neutron-induced SER on the same floor.
Liao, W.*; Hashimoto, Masanori*; Manabe, Seiya*; Watanabe, Yukinobu*; Abe, Shinichiro; Nakano, Keita*; Sato, Hikaru*; Kin, Tadahiro*; Hamada, Koji*; Tampo, Motonobu*; et al.
IEEE Transactions on Nuclear Science, 65(8), p.1734 - 1741, 2018/08
Times Cited Count：15 Percentile：81.29(Engineering, Electrical & Electronic)Soft error induced by secondary cosmic-ray muon is concerned since susceptibility of semiconductor device to soft error increases with the scaling of technology. In this study, we have performed irradiation tests of muons on 65-nm bulk CMOS SRAM in the Japan Proton Accelerator Research Complex (J-PARC) and measured soft error rate (SER) to investigate mechanism of muon-induced soft errors. It was found that SER by negative muon increases above 0.5 V supply voltage, although SER by positive muon increases monotonically as the supply voltage lowers. SER by negative muon also increases with forward body bias. In addition, negative muon causes large multiple cell upset (MCU) of more than 20 bits and the ratio of MCU events to all the events is 66% at 1.2V supply voltage. These tendencies indicate that parasitic bipolar action (PBA) is highly possible to contribute to SER by negative muon. Experimental data are analyzed by PHITS. It was found that negative muon can deposit larger charge than positive muon, and such events that can deposit large charge may trigger PBA.
Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10
no abstracts in English
in the presence of organic ligandsYoshida, Takahiro; Suzuki, Yoshinori*; Ozaki, Takuo; Onuki, Toshihiko; Francis, A. J.*
Proceedings of International Symposium on Radioecology and Environmental Dosimetry, p.296 - 300, 2004/03
The effects of organic ligands (citric acid, desferrioxamine B (DFO) and ethylenediaminetetraacetic acid (EDTA)) on Eu(III) adsorption by an aerobic bacterium were investigated. After incubation of 
with 2 
M Eu(III) without organic ligands in a 0.1 M NaCl solution containing 3.9 mg
/L biomass for 1 hour, over 90% Eu(III) was adsorbed on the bacterial cells at pH 4 - 7. Eu(III) adsorption by bacterial cells was depleted at pH 4 - 7 when equimolar EDTA was present, while citric acid and DFO showed less effect on the depletion of Eu(III) adsorption. X-ray photoelectron spectroscopy (XPS) indicated that the adsorbed Eu(III) on cells was covalently bound to carboxyl and/or hydroxyl functional groups of the cell surface. These results suggest that carboxyl and/or hydroxyl functional groups of cell surface show a higher affinity with Eu(III) than citric acid and DFO and have the potential to prevent migration of Eu-organic ligands complexes with low stability constants in environments.
Kamiya, Tomihiro; Oikawa, Masakazu*; Oshima, Takeshi; Hirao, Toshio; Lee, K. K.; Onoda, Shinobu*; Laird, J. S.
Nuclear Instruments and Methods in Physics Research B, 210, p.206 - 210, 2003/09
Times Cited Count：1 Percentile：12.48(Instruments & Instrumentation)no abstracts in English
Kondo, Toshihiro*; Tamura, Kazuhisa*; Takahashi, Masamitsu; Mizuki, Junichiro; Uosaki, Kohei*
Electrochimica Acta, 47(19), p.3075 - 3080, 2002/07
Times Cited Count：30 Percentile：56.76(Electrochemistry)A nwely designed spectroelectrochemical cell was constructed for surface X-ray scattering (SXS) to study single crystal electrodes. Electrochemical characteristics of a specific face of a single crystal electrode can be investigated in the meniscus mode, adn SXS measurement can be easily carried out using the spectroelectrochemical cell. The usefulness of the present cell was demonstrated by studying the electrochemical deposition of Pd thin layers on Au(111) and Au(001) that require precise amounts of Pd deposits.
Motooka, Takafumi; Kiuchi, Kiyoshi
Corrosion, 58(6), p.535 - 540, 2002/06
Times Cited Count：5 Percentile：39.97(Materials Science, Multidisciplinary)The fatigue crack growth of a commercial grade zirconium has been studied in boiling nitric acid and in air at room temperature under tensile load control. The fatigue crack growth rate in air is strongly dependent on the crystallographic texture. It is interpreted based on the crystal anisotropy on mechanical strength in the hexagonal closed pack structure of zirconium. The fatigue crack growth rate in nitric acid is about four times higher than that in air. Texture is found to have an effect on the fracture path in nitric acid. Microfractography of the fracture surfaces shows that the corrosion fatigue growth has a characteristic mechanism. The fracture surface consists of a mixture of grains: some broken by pseudo-cleavage as seen in stress corrosion cracking, and the others broken by fatigue with striation as seen in air. In the low crack growth rate regime pseudo-cleavage is dominant, whereas in the high crack growth rate regime the main fracture mode is ductile fracture.
Mori, Hidenobu*; Hirao, Toshio; Laird, J. S.; Onoda, Shinobu*; Lee, K. K.; Abe, Hiroshi; Ito, Hisayoshi; Okamoto, Tsuyoshi*; Koizumi, Yoshiharu*
JNC TN7200 2001-001, p.55 - 57, 2002/01
no abstracts in English
Laird, J. S.; Hirao, Toshio; Mori, Hidenobu*; Onoda, Shinobu*; Kamiya, Tomihiro; Ito, Hisayoshi
Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.87 - 94, 2001/07
Times Cited Count：65 Percentile：96.68(Instruments & Instrumentation)no abstracts in English
Hirao, Toshio; Laird, J. S.; Mori, Hidenobu*; Onoda, Shinobu*; Ito, Hisayoshi
Solid State Phenomena Vol.78-79, p.395 - 400, 2001/07
no abstracts in English
Laird, J. S.; Hirao, Toshio; Onoda, Shinobu*; Mori, Hidenobu*; Ito, Hisayoshi
Solid State Phenomena Vol.78-79, p.401 - 406, 2001/07
no abstracts in English
Hirao, Toshio; Ito, Hisayoshi; Okada, Sohei; Nashiyama, Isamu*
Radiation Physics and Chemistry, 60(4-5), p.269 - 272, 2001/03
Times Cited Count：5 Percentile：38.96(Chemistry, Physical)no abstracts in English
Mine, Tatsuya*; Mihara, Morihiro;
JNC TN8430 2000-009, 35 Pages, 2000/07
JNC-TN8430-2000-009.pdf:0.88MB
In the geological disposal system of TRU wastes, nitrogen generation by denitrifying bacteria could provide significant impact on the assessment of this system, because nitrate contained in process concentrated liquid waste might be electron acceptor for denitrifying bacteria. In this study, the activities and tolerance of denitrifying bacteria under disposal condition were investigated. pseudomonas denitrificans as denitrifying bacteria was used. The results showed that Pseudomonas denitrificans had activity under reducing condition, but under high pH condition (PH
9.5), the activity of Pseudomonas denitrificans was not detected. It is possible that the activity of Pseudomonas denitrificans would be low under disposal condition.
Hirao, Toshio; *; Sakai, Takuro; Nashiyama, Isamu
Nuclear Instruments and Methods in Physics Research B, 158(1-4), p.260 - 263, 1999/00
Times Cited Count：9 Percentile：57.16(Instruments & Instrumentation)no abstracts in English
